Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 838-840
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Resonant tunneling through small double-barrier heterostructures is investigated in dependence of the charge accumulation in the quantum well and the device diameter. The study comprises a series of resonant-tunneling diodes with four different barrier-thickness ratios and diameters between 300 nm and 10 μm. Special emphasis lies on the peak-to-valley ratio of the resonant-tunneling current peaks, which drops drastically with decreasing device diameter for weak electron accumulation, while it is size independent in the strong-charging case. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116550
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