Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 1889-1891
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Temporal decay characteristics of dislocation-related luminescence bands (D1–D4) were explored in strain-relieved epitaxial SiGe/Si(100). Close similarity of the decay profiles was observed not only between D1 and D2 bands but also between D3 and D4 bands. The decay transients of the D1 and D2 bands at low temperatures are characterized by long decay times, τ(approximately-greater-than)200 ns, whereas the D3 and D4 bands exhibit even sharper transients with τ〈60 ns. Temperature dependence of "radiative'' lifetimes implies a free-to-bound nature of the D1 and D2 bands, while a bound-to-bound character of the luminescence origins for the D3, D4 bands. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116284
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