Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 810-812
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We examine the direct bonding of (001) InP and (110) GaAs and demonstrate its application to device fabrication. Cross-sectional observation shows that these wafers can be united without generating dislocation. (001) InP-based 1.55-μm wavelength lasers are fabricated on (110) GaAs. The light–current characteristics of the lasers are almost identical to those of lasers fabricated on (001) GaAs, while the turn-on voltage is higher by about 0.4 V due to the large band discontinuity. The results show that the direct bonding technique is promising for allowing new concept "free-orientation integration.'' © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.115451
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