ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on measurements of the potential profile of a GaAs/AlGaAs n-i-p-i multiple quantum well structure using a scanning Kelvin probe force microscope (KFM). Using this novel technique we directly measure with meV precision and sub-100 nm spatial resolution the potential difference between n-i-p-i layers with and without external optical excitation. The measured potential profiles, which have not been directly imaged previously, agree well with potential profiles calculated for optically excited n-i-p-i structures, but modified by band bending effects at the surface. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114867