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  • 1
    Electronic Resource
    Electronic Resource
    GaAs/AlAs trench-buried quantum wires with nearly rectangular cross sections grown by metalorganic chemical vapor deposition on V-grooved substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 472-474 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs trench-buried quantum wires were fabricated by using U-grooved AlAs trenches grown on V-grooved (001) substrates. These trench structures with vertical (110) sidewalls were formed by the faceting of (110) planes, and lateral growth of these planes reduced the trench width to less than 20 nm. A cross-sectional scanning electron microscope image of these trench-buried structures showed GaAs wires about 20 nm wide and 20 nm thick. The growth of these wires is enhanced by the capture of Ga species into the trenches. Blueshifts and strong anisotropy of photoluminescence confirm two-dimensional quantum confinement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111133
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Dynamics of GaAs surfaces exposed to argon and hydrogen electron-cyclotron-resonance plasmas observed by real-time optical reflection spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5987-5994 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamics of the interaction of electron-cyclotron-resonance (ECR) plasmas with the surface of GaAs substrates are studied by real-time optical reflection spectroscopy. Analysis with a three-phase ambient/overlayer/substrate model yields information on the time-dependent composition of the near-surface region, such as the thickness, degree of amorphization, and oxide and void fraction in the overlayer. Using this technique, it is observed that the thickness of the damaged layer formed by the impact of energetic ions increases linearly with the ion energy during argon ECR sputter etching. Furthermore, the dynamics of a cleaning process with a hydrogen ECR plasma have been studied. At temperatures between 300 and 500 °C this cleaning can be characterized by a two-step process. During the first few seconds of exposure, the oxide layer is removed; in the second step, the GaAs is etched gently, which leads to a surface region with little damage to the crystal. At lower temperatures, cleaning is not successful and a thick damaged overlayer is formed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359182
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  • 3
    Electronic Resource
    Electronic Resource
    Rapid relaxation of hot carriers in GaAs fractional-layer superlattice quantum wires (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 218-220 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measure the hot carrier relaxation in two GaAs quantum wire arrays made from fractional-layer superlattices (FLS). Using femtosecond optical pump–probe spectroscopy, we measure the differential transmission spectra for various pump–probe time delays from which we determine the carrier thermalization times. Although the two FLS structures have different degrees of one-dimensional confinement at the band edge, we observe rapid (〈2 ps) and efficient carrier relaxation in both cases with no sign of the inhibited relaxation predicted for ideal one-dimensional structures. We believe that FLS quantum wire structures avoid relaxation bottlenecks because the shape of the FLS confinement potential produces high energy states which are two dimensional in character and which facilitate rapid energy relaxation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117377
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  • 4
    Electronic Resource
    Electronic Resource
    Temperature-dependent dry cleaning characteristics of GaAs (111)B surfaces with a hydrogen electron cyclotron resonance plasma (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2870-2872 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The cleaning of the GaAs (111)B surface with a hydrogen electron cyclotron resonance discharge plasma is investigated at temperatures between 200 and 500 °C and compared with the GaAs (100) surface. It is found that during the exposure the GaAs (111)B is etched in a non-Arrhenius way with a higher etch rate at low temperatures. For temperatures 300–500 °C, the surface is severely roughened after exposure, while the (100) surface remains smooth in all cases. The near-surface crystalline quality of GaAs (111)B remains higher than that of (100).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113457
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  • 5
    Electronic Resource
    Electronic Resource
    Growth of GaAs/AlAs trench-buried multiple quantum wires by metalorganic chemical vapor deposition on V-grooved substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3299-3301 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fabrication of GaAs/AlAs multiple trench-buried quantum wires (TBWs) by metalorganic chemical vapor deposition on V-grooved substrates. The shape of AlAs layers grown on the V-grooves can be changed significantly from a V-shape to U-shape by varying growth temperatures and group-V/III ratios. 30-nm-wide and 100-nm-deep AlAs trenches with nearly vertical sidewalls are formed at the growth temperature of 650 °C with the group-V/III ratio of 165, while V-shaped AlAs grooves are formed at 700 °C with the V/III ratio of 110. Vertically stacked double TBWs are formed using the 30-nm-wide trenches. The low-temperature (15 K) photoluminescence spectrum for the double TBWs shows two distinct emission peaks corresponding to the 6.5- and 8.0-nm-thick wires.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111972
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  • 6
    Electronic Resource
    Electronic Resource
    Photoluminescence properties of 13×13 nm GaAs quantum wires buried in trench structures reduced by growing GaAs/AlAs superlattice layers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1087-1089 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report lateral-size control of GaAs/AlAs trench-buried quantum wires (QWRs) on a scale of 10 nm by metalorganic chemical vapor deposition using nonplanar substrates. The lateral width is reduced to 12–13 nm by growing GaAs/AlAs superlattice layers (SLs) on the (110) sidewall facets of the trenches, where the roughness of the SL sidewalls is approximately several monolayers. Low-temperature photoluminescence (PL) properties of nearly square 13×13 nm QWRs buried in the trenches exhibit a strong PL blue shift of 85 meV with respect to the band-gap energy of GaAs bulk and PL polarization anisotropy of 25% due to two-dimensional quantum confinement effects. The emission from Ga-rich AlGaAs regions in the trenches constituting AlGaAs vertical quantum wells was also observed. We demonstrate that substituting GaAs/AlAs SLs for the AlGaAs layer effectively eliminates the undesired emission levels caused by the inevitable Al content fluctuation in the AlGaAs layer grown on nonplanar structures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114470
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  • 7
    Electronic Resource
    Electronic Resource
    Polarization properties of a vertical cavity surface emitting laser using a fractional layer superlattice gain medium (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3082-3084 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the polarization properties of a vertical cavity surface emitting laser that uses an (Al0.5Ga0.5As)1/2(GaAs)1/2 fractional-layer superlattice (FLS) as an anisotropic gain medium. The anisotropy in the gain enables us to both control and switch the polarization state of the optically pumped lasing output. We obtain room-temperature lasing for wavelengths from 690 to 720 nm. The output is linearly polarized and the polarization direction is fixed, either parallel or perpendicular to the FLS layers. By tuning the cavity resonance wavelength, we demonstrate high contrast switching between two orthogonal linear polarization states in the FLS surface emitting laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109142
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  • 8
    Electronic Resource
    Electronic Resource
    Polarization-dependent optical nonlinearities in fractional-layer superlattices (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2654-2656 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measure the room-temperature polarization-dependent nonlinear absorption and refractive-index spectra of a (Al0.5Ga0.5As)1/2(GaAs)1/2 fractional-layer superlattice (FLS) structure grown by metalorganic chemical vapor deposition. The anisotropic nonlinear effects between the directions parallel and perpendicular to the superlattice give rise to a nonlinear optical birefringence in the plane of the growth surface. From our measurements using a femtosecond optical pulse, we derive the magnitude and spectral shape of the nonlinear optical birefringence. We describe the basis of an all-optical polarization rotation switch using the FLS structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105928
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  • 9
    Electronic Resource
    Electronic Resource
    Direct observation of optical anisotropy in a GaAs/AlAs quantum well wire array (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2969-2971 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using reflectance difference spectroscopy and transmittance difference spectroscopy, optical anisotropy in a quantum well wire array is directly observed at room temperature. The quantum wire array is a fractional-layer superlattice grown by metalorganic chemical vapor deposition on a vicinal (001)GaAs substrate. The size for quantum confinement of the wires is nominally 4×4 nm. Polarization dependence of optical absorption and refractive index is clearly observed between the directions parallel and perpendicular to the wires.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104711
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  • 10
    Electronic Resource
    Electronic Resource
    Photoluminescence excitation spectra in GaAs/AlAs trench-buried quantum wires with 20 nm wide rectangular cross-sectional shapes (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 364-366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polarization-dependent photoluminescence excitation spectra (PLE) are measured in GaAs/AlAs rectangular trench-buried quantum wires (QWRs) with 20 nm width and various thicknesses. Experiments demonstrate that the polarization properties of the PLE spectra, which have several clear peaks corresponding to the optical transitions between quantized conduction and valence subbands, significantly depend on the cross-sectional ratios of the rectangular wires. Quantum indices of these transition levels are assigned by comparing the experiments with theory. The distinctive optical features of the QWRs with the rectangular cross sections are discussed in relation to the characteristics of one-dimensional valence subbands. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116717
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