Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 2870-2872
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The cleaning of the GaAs (111)B surface with a hydrogen electron cyclotron resonance discharge plasma is investigated at temperatures between 200 and 500 °C and compared with the GaAs (100) surface. It is found that during the exposure the GaAs (111)B is etched in a non-Arrhenius way with a higher etch rate at low temperatures. For temperatures 300–500 °C, the surface is severely roughened after exposure, while the (100) surface remains smooth in all cases. The near-surface crystalline quality of GaAs (111)B remains higher than that of (100).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.113457
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