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High-field domain formation in GaAs/AlGaAs superlattices (1995)

Han, Z. Y. ; Yoon, S. F. ; Radhakrishnan, K. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 1120-1122

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The formation of high-field domains in a semiconductor superlattice is verified using a GaAs/AlGaAs superlattice structure with multiple-quantum wells of different well thicknesses but identical barrier width grown by molecular beam epitaxy. Low-temperature current–voltage (I–V) measurements under forward and reverse bias showed that the high-field domain is first formed at the region of wider well thickness instead of preferentially at the anode or the cathode. The electron tunneling process through a tight-binding superlattice with weak coupling between adjacent wells is discussed in terms of the formation and extension of the high-field domains through the superlattice region. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.113832

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