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Observation of strong contrast from doping variations in transmission electron microscopy of InP-based semiconductor laser diodes (1995)

Hull, R. ; Stevie, F. A. ; Bahnck, D.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 341-343

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report strong transmission electron microscope (TEM) contrast between p-, i-, and n-doped InP layers in semiconductor laser diodes. For doping concentrations ∼1018 cm−3, contrast levels on the order 30% are observed between p- and n-type layers. A critical feature of these experiments is that the samples imaged in the TEM are relatively perfect, plane-parallel sided membranes fabricated with a focused ion beam. This technique offers the ability to detect and map doping variations with nm-scale resolution, simultaneously with the other compositional and defect information inherent to TEM. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.114206

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