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Heavy phosphorus doping in molecular beam epitaxial grown silicon with a GaP decomposition source (1995)

Lippert, G. ; Osten, H. J. ; Krüger, D. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 3197-3199

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Doping with phosphorus in solid source silicon molecular beam epitaxy is possible using a GaP decomposition source. This source evaporates solid GaP and is combined with an efficient mass separator system. Homogeneous P doping up to concentrations higher than 1019 cm−3 was realized. Surface accumulation of phosphorus was not observed for the low growth temperature of 400 °C used in this study. The parasitic Ga incorporation is about three orders of magnitudes below the P concentration. This new phosphorus doping technique is suitable for n-type doping in the range of 1017–1020 cm−3. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.113721

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