Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 2840-2842
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Internal gettering efficiencies and stabilities of high and low carbon doped silicon have been compared with standard and ramped annealing conditions. The gettering efficiency of low carbon silicon has been found to be greatly enhanced with ramped annealing by creating a high concentration of oxygen precipitates and related defects. This ramped low carbon material and both the standard and ramped high carbon materials have a greatly enhanced oxygen precipitation rate, relative to the standard low carbon standard anneal. However, the high carbon material's gettering efficiency and stability are low, compared to the ramped low carbon material, due to a reduction of the oxygen precipitate's strain field and concentration of related defects. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.113447
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