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Luminescence of low-temperature GaAs in a GaAs/In0.2Ga0.8As multiple quantum well structure (1995)

Cheng, T. M. ; Chang, C. Y. ; Huang, J. H.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 2095-2097

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The luminescence of GaAs layers grown by molecular beam epitaxy at low substrate temperature (230 °C) in a GaAs/In0.2Ga0.8As multiple quantum well structure is presented. The near-band-gap emission and defect-related emission are observed for samples annealed at high temperature (800–900 °C), but are not observed for samples annealed at lower temperature (600–700 °C). The luminescence shows a strong correlation with the spacing between As precipitates based on the transmission electron microscope observations. The evolution of luminescence of annealed low-temperature (LT) GaAs can be reasonably explained by the buried Schottky model. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.113914

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