Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 2021-2023
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Deposition of Ta2O5 from Ta(OC2H5)5 and O2 has been studied using a distributed electron cyclotron resonance plasma. Carbon contamination levels as low as 1.5% have been obtained when the Ta(OC2H5)5 vapor is introduced "downstream'' away from the plasma volume. Electrical measurements (current density/voltage, capacitance/voltage) suggest the films have dielectric constants ∼22 and leakage currents ∼10−10 A cm−2 for 2 V operation (50 nm thick, 10 nm a-SiO2 equivalent). These values are obtained without the necessity for high temperature annealing and recrystallization. The conduction mechanism is attributed to the Poole–Frenkel effect. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112781
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