Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 2048-2050
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A novel mechanism is proposed for surface-emitting second-harmonic generation at normal incidence using L-valley intersubband transitions in AlSb/GaSb/Ga1−xAlxSb/AlSb stepped quantum wells. The calculations indicate that second-harmonic susceptibilities of at least 9×10−8 m/V should be achievable under double resonance conditions, which is comparable to the best obtainable in GaAs/Ga1−xAlxAs systems for realistic propagation angles (e.g., 45°). Besides the advantage of normal-incidence geometry, the large L-valley conduction band offset between GaSb and AlSb enables doubling to frequencies spanning the entire midwave infrared spectral region. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112789
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
