ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have studied the band gaps and the surface Fermi level positions of a series of In1−xAlxAs surface-intrinsic-n+ structures at room temperature by photoreflectance. Experiments demonstrated that over aluminum concentrations of 0.42–0.57, the surface Fermi level is not pinned at midgap, as commonly believed, but instead varies, respectively, from 0.50±0.01 to 0.81±0.01 eV below the conduction band edge.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.111294