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Diffusion of sulfur-35 into silicon using an elemental vapor source (1993)

Rollert, F. ; Stolwijk, N. A. ; Mehrer, H.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 63 (1993), S. 506-508

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Diffusion of S into Si was investigated by the closed ampoule technique using the radioactive tracer 35S. Erfc-type penetration profiles determined by mechanical sectioning originated from exposure of the samples to evaporated elemental sulfur. Diffusion coefficients in the temperature range 1328–1671 K obey the Arrhenius law with an activation energy of 1.80 eV and a pre-exponential factor of 4.7×10−6 m2 s−1. This high diffusivity can be reconciled with the preferred incorporation of S on lattice sites by invoking substitutional-interstitial exchange. Within this concept the measured long-range transport appears to be controlled by a minority of interstitial S atoms.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.109987

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