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Temperature characteristics of (InAs)1/(GaAs)4 short-period superlattices quantum well laser (1993)

Dutta, N. K. ; Chand, Naresh ; Lopata, J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 62 (1993), S. 2018-2020

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The temperature characteristics of (InAs)1/(GaAs)4 superlattice quantum well lasers are analyzed both experimentally and theoretically. The measured threshold current density as a function of temperature is characterized by a T0=135 K for 115 K〈T〈380 K and by T0=47 K for 420 K〈T〈480 K. The radiative and nonradiative recombination rates and the gain versus carrier density relationship in monolayer superlattice structures are calculated. Inclusion of the nonradiative recombination process is necessary to explain the observed high-temperature characteristics of these lasers.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.109521

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