Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 2027-2029
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Data are presented demonstrating a design and fabrication process for the realization of low-threshold, high-output vertical-cavity surface-emitting laser diodes with low series resistance. Lateral current confinement is achieved in the laser structures through the use of molecular-beam epitaxial regrowth over a 1000-A(ring)-thick patterned layer of low growth temperature AlGaAs incorporated into the p-type top mirror. A maximum cw output power in excess of 5.7 mW, at 300 K is demonstrated for 15-μm-diam devices. With increased top mirror reflectivity (through the addition of dielectric layers), the low series resistance of the design results in a bias voltage of only 1.8 V at a threshold current of 1.9 mA for 10-μm-diam devices.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109494
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