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Single-crystal Al growth on Si(111) by low-temperature molecular beam epitaxy (1993)

Miura, Y. ; Fujieda, S. ; Hirose, K.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 62 (1993), S. 1751-1753

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Al films were formed by low temperature molecular beam epitaxy on Si(111) surfaces. The substrates were pretreated in a NH4F solution to obtain a nearly atomically flat surface by anisotropic etching. Planview transmission electron microscopy observation demonstrates that single-crystal Al films are successfully grown on the 7×7 surface structure. Such single-crystal growth is arrested on a disordered or hydrogen-terminated surface.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.109595

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