Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 1656-1657
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Homojunction diodes were fabricated by doping of phosphorus to n-type Cu-In-Se thin films. The junction prepared by P implantation at the energy of 50 keV with the dose of 1×1015 ions/cm2 showed a rectification ratio of more than 100. Conduction in Cu-In-Se thin films, whose crystal structure is of the chalcopyrite type, changes from n- to p-type in such a way that group V elements (N, P, Sb, or Bi) substitute for Se in the film.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.108617
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