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  • 1
    Electronic Resource
    Electronic Resource
    (Tl, Pb, Bi)Sr2Ca2Cu3Oz superconductors with zero resistance at 120 K (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1281-1283 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have synthesized new superconductors of nearly single phase with zero-resistance temperatures around 120 K employing a novel method for sintering. The samples included a nominal composition of (Tl0.64Pb0.2Bi0.16)Sr2Ca3Cu4Oz. This sample was prepared from the mixture of presynthesized (Tl0.64Pb0.2Bi0.16)Sr2CaCu2Oz (1212 phase), CaO, and CuO powders. The mixed powder was sintered at 920 °C in O2 gas and post-annealed at 400–600 °C in O2 gas. The powder x-ray diffraction revealed that the sample was isostructural with the Tl-based (Tl, Pb, Bi)Sr2Ca2Cu3Oz (1223 phase). The sample exhibited a sharp superconducting transition at Tonsetc=125 K and TR=0c=120 K and the superconducting diamagnetic signal at 10 K was about 20% of a full Meissner effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103174
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  • 2
    Electronic Resource
    Electronic Resource
    Fivefold multiply twinned crystallites in CuInSe2 (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 333-335 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of polycrystalline CuInSe2 thin films are studied by cross-sectional high resolution electron microscopy. The CuInSe2 films were deposited on a Mo coated glass substrate by three-source evaporation. The film contained fivefold multiply twinned crystallites as well as a high density of twins in {112} planes. The formation of these defects are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111167
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  • 3
    Electronic Resource
    Electronic Resource
    Enhanced electrical conductivity of zinc oxide thin films by ion implantation of gallium, aluminum, and boron atoms (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2069-2072 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effect of ion implantation on the conductivity of zinc oxide was examined by using highly resistive zinc oxide thin films deposited by rf magnetron sputtering at room temperature to reduce the effect of oxygen vacancies. With the doping by 1×1017 atoms/cm2 gallium the conductivity is 1.0×103/Ω cm for as-implanted film and it increases up to 3.7×103/Ω cm, the highest conductivity reported for zinc oxide films, with raising the annealing temperature in either a nitrogen or oxygen atmosphere. The conductivity of aluminum-doped films is slightly lower than those of gallium-doped films. Among the elements gallium, aluminum, and boron, gallium is the most effective in enhancing the conductivity and boron is the least. The order of the effectiveness is explained by the electronegativity of the dopants.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356310
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  • 4
    Electronic Resource
    Electronic Resource
    Critical current density and microstructure of YBa2Cu4O8 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 384-389 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the intragranular critical current density Jc in YBa2Cu4O8 prepared by two routes with different oxygen pressures at various temperatures and applied fields. A relationship between the Jc's and the microstructures observed by transmission electron microscopy is discussed. The magnitude of Jc for the low oxygen processed sample is higher by a factor of 5 than that for the high oxygen pressure sample. Transmission electron microscopy reveals that the sample prepared at high oxygen pressure shows an almost perfect stacking sequence, but the low oxygen pressure prepared one has a severely distorted structure. We conclude that the difference in Jc(H) for the samples must be related to the different microstructures. Jc at a fixed magnetic field shows an exponential temperature dependence similar to that seen in other high-Tc superconductors. The field dependence is Jc∝H−n with n between 0.5 and 1.5, and with the n value becoming larger at higher temperatures. This type of the behavior may arise from the two-dimensional character of YBa2Cu4O8.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347726
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  • 5
    Electronic Resource
    Electronic Resource
    Preparation and characterization of Cu(In1−xGax)3Se5 thin films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 825-827 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline Cu(In1−xGax)3Se5 thin films were prepared by four source evaporation with controlling and shielding of the molecular beams from elemental sources. Ga content x, can be controlled by deposition times of CuIn3Se5 and CuGa3Se5 layers, which form Cu(In1−xGax)3Se5 films through the interdiffusion. X-ray diffraction analyses showed that the films with x(approximately-less-than)0.5 have an ordered vacancy chalcopyrite and the films with x(approximately-greater-than)0.5 have a zinc blende structure. The optical band gap of the films linearly increased from 1.23 eV (x=0) to 1.85 eV (x=1) with increasing Ga content. The conductivity of the films was about 10−6/Ω cm and about 10−7/Ω cm under and above x=0.3, respectively. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115456
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  • 6
    Electronic Resource
    Electronic Resource
    Enhanced conductivity of zinc oxide thin films by ion implantation of hydrogen atoms (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2876-2878 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhancement of the conductivity of zinc oxide through doping with hydrogen atoms was examined by using ion implantation of highly resistive thin films deposited by rf magnetron sputtering at room temperature. With a doping of 1×1017 atoms cm−2, the conductivity after annealing at 200 °C in an N2 atmosphere at 1 atm rose from the initial 1×10−7 Ω−1 cm−1 to 5.5×102 Ω−1 cm−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111401
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  • 7
    Electronic Resource
    Electronic Resource
    CuInSe2 homojunction diode fabricated by phosphorus doping (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1656-1657 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homojunction diodes were fabricated by doping of phosphorus to n-type Cu-In-Se thin films. The junction prepared by P implantation at the energy of 50 keV with the dose of 1×1015 ions/cm2 showed a rectification ratio of more than 100. Conduction in Cu-In-Se thin films, whose crystal structure is of the chalcopyrite type, changes from n- to p-type in such a way that group V elements (N, P, Sb, or Bi) substitute for Se in the film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108617
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  • 8
    Electronic Resource
    Electronic Resource
    Phase stability and decomposition of superconductive YBa2Cu4O8 (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 81-83 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of the YBa2Cu4O8 phase has been studied with respect to oxygen partial pressure P(O2 ) and temperature by x-ray diffraction, thermogravimetry, and differential thermal analysis. The critical temperature Td for the decomposition of YBa2Cu4O8 phase was determined from thermal analyses. It was found that Td was strongly dependent on P(O2 ) and the following empirical relation was obtained: log[P(O2)(atm)]=12.41−(1.449×104)/Td(K). It was found that, when heated, YBa2Cu4O8 first decomposed into YBa2 Cu3.5 O7.5−z plus CuO for 0.02 atm〈P(O2 )〈9 atm, while for P(O2 )≤0.02 atm, it decomposed into YBa2Cu3O7−z plus CuO without yielding YBa2Cu3.5O7.5−z .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104236
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical properties of Na-incorporated Cu(In1−xGax)3Se5 thin films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 835-837 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Na-incorporated Cu(In1−xGax)3Se5(Cu(In1−xGax)3Se5:Na) films were prepared by the deposition of Cu(In1−xGax)3Se5 layers on Na2S-coated substrates. Electrical properties of the Cu(In1−xGax)3Se5:Na films were evaluated by I–V and spectral response measurements of devices with an ITO/ZnO/CdS/Cu(In1−xGax)3Se5:Na/Mo/glass structure. The Cu(In1−xGax)3Se5:Na films with x〉0 showed p-type conduction, whereas for Cu(In1−xGax)3Se5 without the addition of Na2S, films with x〈0.3 showed n-type conduction. The addition of Na was found to have a strong influence on the electrical properties of Cu(In1−xGax)3Se5 films as well as Cu(In1−xGax)Se2 films. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119661
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  • 10
    Electronic Resource
    Electronic Resource
    Preparation of CuInS2 films by sulfurization of Cu-In-O films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1943-1945 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuInS2 thin films are prepared by using a newly developed two-stage process comprised of a first process by which Cu-In-O films are prepared from a Cu2In2O5 target by a pulsed laser deposition, and a second process by which the prepared Cu-In-O films are transformed into CuInS2 films by applying an annealing in a H2S gas. The characteristics of thus obtained CuInS2 films are determined by using an x-ray diffractometer, an energy dispersive x-ray spectrometer, and a scanning electron microscope, in addition to a spectrophotometer. The CuInS2 film with chalcopyrite-type structure is obtained when it is annealed at a temperature higher than 400 °C. The effect of annealing temperature on its structural and optical properties is being analyzed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109498
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