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Structure of recrystallized silicon films prepared from amorphous silicon deposited using disilane (1993)

Hasegawa, S. ; Sakamoto, S. ; Inokuma, T. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 62 (1993), S. 1218-1220

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The structure of polycrystalline Si (poly-Si) films, prepared by annealing of amorphous Si films deposited using Si2H6 and SiH4, has been investigated as a function of deposition temperature Td (450–580 °C) and annealing temperature Ta (550–1000 °C). A dominant texture of the poly-Si films changed from 〈100〉 for Td below 500 °C to 〈111〉 texture for Td above 500 °C, independent of Ta. For Ta lower than 650 °C, a greater grain size was obtained by the use of Si2H6 rather than SiH4. It was suggested that the changes of these texture and grain size, respectively, are mainly controlled by Td and the deposition rate of the amorphous Si films.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.108739

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