Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
61 (1992), S. 1075-1077
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the first epitaxial growth of CoGa thin films on (100)GaAs substrates by organometallic chemical vapor deposition. The separate sources (η5-C5H5)Co(CO)2 and Et3Ga were mixed in a stream of carrier gas and decomposed in a conventional cold wall epitaxial reactor between 260 and 300 °C under atmospheric pressure. A typical growth rate of 1 μm/h was achieved and the film composition could be directly monitored from the gas phase composition. The Co-rich films have the α-Co metal structure and react with GaAs at 500 °C to form CoAs. By contrast, Ga-rich β-CoGa films were lattice matched on (100)GaAs and were found to be thermodynamically stable at 500 °C. This work demonstrates that organometallic vapor phase epitaxy is also a suitable technique for the fabrication of buried metal/semiconductor heterostructures.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107695
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