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(InAs)1/(GaAs)4 superlattices quantum-well laser (1992)

Dutta, N. K. ; Chand, Naresh ; Lopata, J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 60 (1992), S. 924-925

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report the fabrication and performance characteristics of (InAs1)/(GaAs)4 short-period superlattice (SPS) strained quantum-well lasers emitting near 1 μm. The SPS consists of 6 periods of 1 and 4 ML of InAs and GaAs, respectively. The 250-μm-long ridge waveguide lasers have a threshold current of 10 mA, an external differential quantum efficiency of 0.35 mW/mA facet, and have operated to a temperature of 200 °C.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.106462

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