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Shallow ohmic contacts to n-type GaAs and AlxGa1−xAs (1992)

Zheng, L. R. ; Wilson, S. A. ; Lawrence, D. J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 60 (1992), S. 877-879

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Sequential deposition of Pd/AuGe/Ag/Au and rapid thermal annealing are used to form shallow ohmic contacts to n-GaAs and n-AlxGa1−xAs. Ion backscattering measurements and cross-sectional transmission electron microscopy show limited metal-substrate reaction and uniform interfaces. The metallization on GaAs displays good electrical properties with a contact resistivity of 2.0×10−6 Ω cm2 at a carrier concentration of 2×1017 cm−3. The contacts formed on Al0.55Ga0.45As have a contact resistivity of 2.1×10−5 Ω cm2 at a carrier concentration of 7.5×1017 cm−3.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.106491

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