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  • 1
    Electronic Resource
    Electronic Resource
    Isoproterenol activation of prostaglandin productionin guinea-pig aiway muscle preparations from immature and mature animals
    Amsterdam : Elsevier
    Prostaglandins 41 (1991), S. 229-236 
    Details
    ISSN: 0090-6980
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0090-6980(91)90043-F
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  • 2
    Electronic Resource
    Electronic Resource
    Microstructure of 110 K superconducting Bi-Sr-Ca-Cu-O thin films grown on (100)MgO by metallo-organic decomposition
    Amsterdam : Elsevier
    Physica C: Superconductivity and its applications 167 (1990), S. 614-626 
    Details
    ISSN: 0921-4534
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0921-4534(90)90681-4
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  • 3
    Electronic Resource
    Electronic Resource
    A cubic phase in the Y-Ba-Cu-O system and heteroepitaxial orthorhombic/cubic thin film structures
    Amsterdam : Elsevier
    Physica C: Superconductivity and its applications 180 (1991), S. 26-29 
    Details
    ISSN: 0921-4534
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0921-4534(91)90627-B
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  • 4
    Electronic Resource
    Electronic Resource
    Segregation of impurities in pulsed-laser-melted carbon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1802-1809 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The segregation of 73Ge and 75As in pulsed-laser-melted carbon has been investigated. Both 73Ge and 75As were implanted into highly oriented pyrolytic graphite at a fluence of 1.0×1015 cm−2 at several energies. The implanted graphite was subsequently irradiated with a 30-ns pulsed ruby laser with laser pulse energy densities above the melt threshold for graphite. The distribution of impurities was measured before and after laser irradiation using Rutherford backscattering spectrometry to determine the redistribution of impurities resulting from diffusion in liquid carbon and segregation at the liquid-solid interface. Numerical calculations were then used to determine the diffusivity of the impurities in liquid carbon and the nonequilibrium segregation coefficient of Ge and As in carbon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341779
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  • 5
    Electronic Resource
    Electronic Resource
    Annealing of Si-implanted GaAs studied using variable-energy positrons (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1799-1804 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Modification of GaAs by Si+-ion implantation is an important process for selective doping of the material. Defects caused by the implantation process often lead to incomplete electrical activation, and annealing procedures are used to recover the crystal quality. Results are presented of variable-energy positron (VEP) and cross-sectional transmission electron microscopy (XTEM) studies of a series of GaAs samples implanted with moderate to high fluences of 3×1013, 3×1014, and 1×1015 Si+ ions cm−2. Samples were irradiated at room temperature, and studied both before and after thermal annealing for one hour at 850 °C. In all cases XTEM results show a high density of small extrinsic dislocations after implantation, and VEP shows high concentrations of point (vacancy type) defects. Annealing leads to a decrease in the point-defect concentration in the lowest-fluence sample, but both XTEM and VEP confirm the formation of macroscopic (i.e., (approximately-greater-than)20 A(ring) diameter) voids following annealing. These data are discussed in the context of microscopic models for defect formation and migration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351650
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  • 6
    Electronic Resource
    Electronic Resource
    Void formation and inhibition of layer intermixing in ion-impIanted GaAs/AlGaAs superlattices (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1194-1196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Voids have been found in the near-surface region of GaAs/AlGaAs superlattices in a transmission electron microscopy study. The superlattices were Si- or Al-implanted and subsequently either furnace or rapid thermally annealed. Concurrent with the presence of voids is an inhibition of superlattice layer intermixing enhancement in the near-surface region. This inhibition does not occur in the deeper region of the samples where voids are not found. The voids can form via condensation of the Ga and As vacancies produced by the implantation process. We suggest that voids can depress dopant activation, suppress dopant diffusion, and inhibit the superlattice layer intermixing enhancement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101653
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  • 7
    Electronic Resource
    Electronic Resource
    Microstructure of epitaxially oriented superconducting YBa2Cu3O7−x films grown on (100) MgO by metalorganic decomposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 286-288 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure in epitaxially oriented thin films of YBa2Cu3O7−x grown on (100) MgO by metalorganic decomposition has been studied by transmission electron microscopy and ion channeling. The as-prepared films consisted of single-crystal platelets lying flat on the MgO surface. The majority of the crystallites showed perfect alignment of their c axis with the [100] axis of MgO, while some crystallites were found to have a misorientation of up to 7.5°. Images of the interfacial regions showed good epitaxial growth to within one lattice spacing of the MgO substrate. He++ channeling measurements as a function of energy from 1 to 4.5 MeV indicated a 0.51° spread in crystallite orientation. Extrapolation of the channeling measurements to the limit of zero crystallite spread gave a minimum yield of 0.20 for bulk YBa2Cu3O7−x , which is much larger than the value reported for single crystals. The large backscattering yield is attributed to the grain boundaries in the film. A relatively strain-free interface was indicated by channeling results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102406
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  • 8
    Electronic Resource
    Electronic Resource
    Do nasal mast cells release histamine on stimulation with substance P in allergic rhinitis? (1994)
    Oxford, UK : Blackwell Publishing Ltd
    Clinical & experimental allergy 24 (1994), S. 0 
    Details
    ISSN: 1365-2222
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The effects of nasal administration of increasing doses of exogenous substance P have been studied in patients with allergic rhinitis treated with placebo or with the H1 antagonist certirizine (10 mg twice daily for 3 days). Responses to substance P were assessed by posterior rhinomanometry (measuring nasal airway resistance) and by measure of histamine. protein and albumin production and cell recovery in nasal lavage fluids before and after challenge. Substance P induced a dose-dependent increase in nasal airway resistance which was similar after treatment with either cetirizine or placebo (maximal increase in nasal airway resistance was 4-2-fold greater than the baseline with the placebo and 4-7-fold greater than the baseline with cetirizine). No histamine release was observed. Similar increases in protein and albumin production were observed after stimulation with substance P along with the placebo (protein: from 0.35±0.11 to 3.31±0.62 mg and albumin: from 0.09±0.04 to 2.08±0.39 mg) and when combined with cetirizine treatment (proteins: from 0.42±0.09 to 3.62±0.77 and albumin: from 0.17±0.04 to 2.19±0.51 mg). After stimulation with substance P, percentages of neutrophils recovered in nasal fluids increased from 26.2±11.5 to 54.5±9.5 with the placebo and from 35.5±11.0 to 53.6±9.5 with cetirizine. Eosinophils were inconsistently found after substance P stimulation during both treatments. In conclusion, nasal response lo substance P is not modified by cetirizine which suggests that the effect of substance P is not secondary to histamine release in the nose in man.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2222.1994.tb02723.x
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  • 9
    Electronic Resource
    Electronic Resource
    The processes of formation and epitaxial alignment of SrTiO3 thin films prepared by metallo-organic decomposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 961-970 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The processes of formation and crystallization of thin films of SrTiO3 prepared by the method of metallo-organic decomposition have been studied with particular emphasis on the relationship between the thermal decomposition of the metallo-organic precursors and the eventual epitaxial alignment of the crystallized films. The films are deposited by spin coating onto single-crystalline silicon and SrTiO3 substrates, pyrolyzed on a hot plate at temperatures ranging from 200 to 450 °C, and subsequently heat treated in a quartz tube furnace at temperatures ranging from 300 to 1200 °C. Heat treatment at temperatures up to 450–500 °C results in the evaporation of solvents and other organic addenda, thermal decomposition of the metallo-organic (primarily metal-carboxylates) precursors, and formation of a carbonate species. This carbonate appears to be an intermediate phase in the reaction of SrCO3 and TiO2 to form SrTiO3. Relevant to this work is the fact that the carbonate species exhibits diffraction lines, indicating the formation of grains that can serve as seeds for the nucleation and growth of randomly oriented SrTiO3 crystallites, thereby leading to a polycrystalline film. Deposition on silicon substrates indeed results in the formation of polycrystalline SrTiO3. However, when the precursor solution is deposited on single-crystalline SrTiO3 substrates, the crystallization process involves a competition between two mechanisms: the random nucleation and growth of crystallites just described, and layer-by-layer solid phase epitaxy. Epitaxial alignment on SrTiO3 substrates can be achieved when the samples are heat treated at temperatures of 1100–1200 °C or at temperatures as low as 600–650 °C when the substrate is heated to about 1100 °C before spin coating.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353310
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  • 10
    Electronic Resource
    Electronic Resource
    Distribution mechanism of voids in Si-implanted GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 656-660 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Voids, formed by the condensation of an excess of implantation-induced vacancies, have been recently identified as the defect directly responsible for dopant diffusion and electrical activation anomalies in Si-implanted and annealed GaAs and GaAs/AlGaAs superlattice materials. Depending on the implanted dose, voids can be distributed either throughout the implanted region or in two bands. We have examined the origin of this void distribution difference. In the as-implanted sample associated with the latter case, a buried continuous band of amorphous GaAs has formed. GaAs formed by the recrystallization of amorphous GaAs does not contain excess vacancies and therefore cannot form voids. However, on either side of the amorphous layer, the excess vacancies can condense to form the observed banded distribution of voids. In the as-implanted sample associated with the former case, a continuous amorphous GaAs layer did not form, and therefore, upon annealing, voids are seen throughout the implanted region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349669
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