Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 788-790
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present the calculation of the Raman spectra in backscattering configuration for AlxGa1−xAs (001) superlattices and modulated alloys, based on the bond-charge-model dynamics, the average t-matrix approximation for compositional disorder and the bond polarizability model for the Raman tensor. The features of Raman spectra are shown to reflect the Al concentration profile along the growth axis, hence providing a valuable tool for compositional characterization of superlattices.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105343
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