Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 277-279
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The results of numerical simulations of two high-rate diamond growth environments (oxygen-acetylene torch and dc arcjet) are reported. The calculations account in detail for boundary-layer transport, gas-phase chemistry, and gas-surface chemistry. Diamond growth rates are calculated self-consistently with the gas-phase concentrations, using a recently proposed methyl growth mechanism. The calculated growth rates agree well with the measured values, indicating that this growth mechanism can account for both high- and low-rate diamond growth.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105620
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