Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 2980-2982
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
From a combined secondary ion mass spectroscopic and optical absorption investigation, the unintentional hydrogen concentration in III–V compounds grown by the liquid encapsulation Czochralski technique is shown to be about 1016 cm−3. In GaAs materials annealed for few hours at high temperature, this concentration is only in the 1013 cm−3 range.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105818
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