ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Data are presented on the disordering of an AlxGa1−xAs-GaAs laser structure using indium solid sources. Using separate and co-diffusion of silicon and indium from thin-film sources, indium was inferred to have a higher diffusion coefficient than silicon, and to result in a similar degree of impurity-induced disordering. The degree of index guiding was tested by excess-loss measurements in single-mode raised-cosine s-bends. In particular, structures patterned by SiO2/In disordering had excess losses similar to those patterned with SiO2. A 260 μm transition length for 3 dB loss was measured for 1-μm-wide guides with 100 μm guide offsets, which corresponds to a lateral index of refraction difference of ≈0.8–1.0%. There was no evidence for increased linear loss due to the presence of a dilute InGaAs alloy at the measurement wavelength of 870 nm.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105840
