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Fast escape of photocreated carriers out of shallow quantum wells (1991)

Feldmann, J. ; Goossen, K. W. ; Miller, D. A. B. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 59 (1991), S. 66-68

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report that at room temperature the field-induced escape of photogenerated carriers out of shallow GaAs/AlxGa1−xAs multiple quantum wells is as fast as for pure GaAs of the same thickness, if the value of x does not exceed 0.04. Our experimental findings can be explained by assuming that carriers are efficiently scattered into the unconfined barrier states by absorption of a LO phonon, as long as the effective barrier height is less than the LO-phonon energy. The application of shallow quantum wells with x≤0.04 in self-electro-optic effect devices, providing not only strong excitonic electroabsorption but also fast sweep-out times at small biases, should lead to shorter switching times.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.105524

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