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Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition (1991)

Asif Khan, M. ; Kuznia, J. N. ; Van Hove, J. M. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 58 (1991), S. 526-527

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report on the low-pressure metalorganic chemical vapor deposition of high quality single-crystal GaN layers over basal plane sapphire substrates. Optimization of growth conditions resulted in material with carrier densities of 1017 /cm3 at room temperature and corresponding mobilities around 350 cm2 /V s. The photoluminescence linewidths improved from 160 meV [full width at half maximum (FWHM)] to 25 meV (FWHM). With improved material quality we were able to observe the polar optical mode and the ionized impurity scattering regimes in the mobility versus temperature data. Good quality Schottky barriers were formed on the as-grown material using a tungsten probe and an alloyed indium contact. Our observations indicate a direct correlation between electrical and optical characteristics of good material and strongly question nitrogen vacancies as the sole explanation for the high carrier densities observed in poor quality GaN growths.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.104575

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