Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
58 (1991), S. 304-306
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Epitaxial yttria-stabilized zirconia (YSZ) films were deposited on (11¯02) sapphire by pulsed laser deposition. The films are formed in a cubic phase with the a axis normal to the substrate surface. Ion beam (2.8 MeV He++) channeling measurements show that the YSZ films are highly crystalline with a channeling minimum yield of 8%. The epitaxial relationship between the film and substrate is further confirmed by a cross-section transmission electron microscopy study. Epitaxial YBa2Cu3O7−δ thin films deposited on YSZ/sapphire have Tc and Jc of up to 89 K and 1×106 A/cm2 at 77 K, respectively.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104669
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