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High-power, very low threshold, GaInP/AlGaInP visible diode lasers (1991)

Serreze, H. B. ; Chen, Y. C. ; Waters, R. G.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 58 (1991), S. 2464-2466

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Visible light (665 nm) laser diodes employing a strained-layer, single quantum well, graded index separate confinement heterostructure were fabricated from epitaxial wafers grown by metalorganic chemical vapor deposition. Threshold current densities for single element, uncoated, broad-area diodes operated cw as low as 425 A/cm2, cw power outputs of 340 mW per facet, and pulsed outputs (100 μs pulse width) of slightly under 1 W per facet were achieved. These power output values are believed to be the highest reported to date for visible light diode lasers, and this cw threshold current density is believed to be, by far, the lowest.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.104845

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