Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
58 (1991), S. 2432-2434
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The use of silicon on sapphire (SOS) as a substrate for YBa2Cu3O7−δ allows the growth of thick (∼4000 A(ring)) films without the thermally induced cracking characteristic of epitaxial films on bulk Si substrate. Epitaxy is sustained and reaction is prevented by an intermediate buffer layer of yttria-stabilized (YSZ). The transport critical current density is as high as 4.6×106 A/cm2 at 77 K, and surface resistance measurements at 4.2 K are reported. Microtwin propagation from Si into YSZ is shown not to occur.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104864
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