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  • 1
    Electronic Resource
    Electronic Resource
    InAsyP1−y/InP multiple quantum well optical modulators for solid-state lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1366-1368 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the operation of strained-layer InAsyP1−y/InP multiple quantum well optical modulators at wavelengths compatible with solid-state lasers such as neodymium-doped yttrium aluminum garnet. A structure having 50 periods of 100 A(ring) InAsyP1−y quantum wells with 100 A(ring) InP barriers is described that has an exciton peak at 1.05 μm and a single pass transmission contrast ratio of 1.4. Favorable comparison is made to similar InxGa1−xAs/GaAs structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104310
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