Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
57 (1990), S. 548-550
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the operation of strained-layer InxGa1−x As/GaAs 50- and 100-period multiple quantum well optical modulators at wavelengths ranging from 1.02 to 1.07 μm. Structures were grown on GaAs substrates, as well as on strain relief InxGa1−xAs buffer layers. Devices show favorable electrical characteristics and absorption contrasts up to 57% at the exciton peak. Optical modulation of a Nd:YAG laser is demonstrated, via operation of self-electro-optic effect devices at 1.064 μm.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103643
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