ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The factor γ=1+(RS+RD)/Rds is suggested to modify the expression of effective electron velocity in field-effect transistors (FETs), where RS and RD are the source and drain resistances, respectively, and Rds is the intrinsic drain-to-source resistance. Based on this modified expression ν'eff = 2πLfTγ, where L is the gate length and fT is the cut-off frequency, velocity overshoots were observed clearly at room temperature in AlxGa1−xAs/GaAs heterostructure insulated-gate FETs with both undoped and doped channels.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103622