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Intersubband absorption in highly strained InGaAs/InAlAs multiquantum wells (1990)

Asai, Hiromitsu ; Kawamura, Yuichi

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 56 (1990), S. 746-748

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Highly strained In0.66 Ga0.34 As/In0.30 Al0.70 As multiquantum wells (MQWs) are successfully grown on (001)InP substrates by moleular beam epitaxy. Good crystal quality in the strained MQWs is confirmed by clear excitonic peaks and sharp photoluminescence spectra. Intersubband absorption at a wavelength as short as 3.1 μm was obtained for the first time in uniformly Si-doped strained MQWs.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.102700

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