ZIB

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Trapped positive charge in plasma-enhanced chemical vapor deposited silicon dioxide films (1990)

Buchanan, D. A. ; Stathis, J. H. ; Wagner, P. R.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 56 (1990), S. 1037-1039

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report an investigation of trapped positive charge in as-fabricated plasma-enhanced chemical vapor deposited SiO2 films using electrical and spin resonance techniques. We show that the positive charge results from donor-like "slow'' interface states ("anomalous positive charge'') rather than trapped holes, and that most (∼95%) of the positive charge is not related to E' centers. The positive charge is similar to that seen in electron-injected thermally grown SiO2, and unlike radiation-induced trapped holes.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.103327

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit