Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 1865-1867
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report a high-efficiency PpinN GaAs/AlGaAs waveguide phase modulator for high-speed operations. By introducing p- and n-GaAs layers beside the intrinsic GaAs layer of a P-i-N double heterostructure, the absorption edge-related effect, hardly used in P-i-N phase modulators, is utilized. We demonstrate a high phase shift efficiency of 37.5°/V mm at 1.3 μm wavelength. Although this corresponds to the highest expeirmental value reported for reverse-biased GaAs/AlGaAs phase modulators, our device operates with a low junction and a very low dynamic capacitance.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102155
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
