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  • 1
    Electronic Resource
    Electronic Resource
    Highly efficient separate-confinement PpinN GaAs/AlGaAs waveguide phase modulator (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1865-1867 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a high-efficiency PpinN GaAs/AlGaAs waveguide phase modulator for high-speed operations. By introducing p- and n-GaAs layers beside the intrinsic GaAs layer of a P-i-N double heterostructure, the absorption edge-related effect, hardly used in P-i-N phase modulators, is utilized. We demonstrate a high phase shift efficiency of 37.5°/V mm at 1.3 μm wavelength. Although this corresponds to the highest expeirmental value reported for reverse-biased GaAs/AlGaAs phase modulators, our device operates with a low junction and a very low dynamic capacitance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102155
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Tertiary butylarsine grown GaAs solar cell (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 671-673 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality, intentionally doped (both p and n type) gallium arsenide layers have been grown using trimethylgallium and tertiary butylarsine in a low-pressure metalorganic chemical vapor deposition reactor. Using an alternate arsenic source, namely, tertiary butylarsine, a concentrator GaAs solar cell has been fabricated. Under 37 sun, air mass 1.5 illumination, the cell had an open-circuit voltage of 1.095 V, a fill factor of 83%, and an overall efficiency of 18.5%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100883
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Zinc diffusion in GaSb (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3787-3789 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report here the diffusion behavior of zinc in n-type GaSb in the temperature range of 450–540 °C. The diffusion was carried out in a closed box system using a zinc-gallium source. The diffusion profiles were obtained using secondary ion mass spectrometry. From the diffusion profiles, concentration dependent diffusion coefficients were calculated using Boltzman–Montano analysis. These data have been qualitatively interpreted in terms of the interstitial-substitutional diffusion model originally proposed for zinc diffusion in GaAs. Finally, diffused junction GaSb solar cells were fabricated and their performance evaluated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352885
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Photoelectron spectra of amorphous SixHy alloy films: The effect of microstructure on the Si-2p level shift (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2530-2535 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depending on the deposition conditions, amorphous SixHy alloy films prepared by planar rf reactive magnetron sputtering exhibit one of three types of microstructure: (i) type A with no discernible microstructural features down to the 20-A(ring) level and with a smooth uniform density; (ii) type B consisting of high-density regions of 50–200-A(ring) lateral dimensions separated by a low-density network; and (iii) a two-level (type C) microstructure consisting of 300–500-A(ring) dimensions columns separated by a pronounced low-density network. The columns, in turn, are composed of 50–200-A(ring) dimension high-density regions interspersed with low-density network. The Si-2p level in these alloy films, determined by x-ray photoelectron spectroscopy, is observed to be strongly influenced by the microstructure of the film. A shift in the Si-2p level, systematically varying with the hydrogen concentration, is observed in alloy films with type B and type C microstructures. No shift is observed, irrespective of the hydrogen concentration, in alloy films with type A microstructure. The photoelectron spectra are examined in the light of the vibrational spectra of the films as measured by Fourier transform infrared techniques. The dependence of the Si-2p level shift on the microstructure and the variation with hydrogen concentration are explained qualitatively in terms of the differences in the silicon–hydrogen bonding in amorphous SixHy films with dissimilar microstructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337116
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  • 5
    Electronic Resource
    Electronic Resource
    GaSb booster cells for over 30% efficient solar-cell stacks (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3866-3870 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fabrication of GaSb infrared-sensitive photovoltaic cells designed to boost the energy-conversion efficiency in tandem solar cell stacks is reported. Located behind GaAs solar-cells in 50× concentrated light configurations, these GaSb cells will boost the stack efficiency by 6.5 percentage points for space (AM0) and 7.0 percentage points for terrestrial (AM1.5D) applications. Assuming a GaAs cell efficiency of 26.7% (AM1.5D, 50×) as recently reported, the GaAs on GaSb stack efficiency will be 33.7%. Reduced series resistance in future GaSb cells will allow tandem-stack energy-conversion efficiencies over 35%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344051
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  • 6
    Electronic Resource
    Electronic Resource
    Structure, chemistry, and band bending at Se-passivated GaAs(001) surfaces (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2342-2344 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Se-passivated n-GaAs(001) surfaces prepared in a metalorganic chemical vapor desposition reactor have been investigated by means of x-ray photoelectron spectroscopy, low-energy electron diffraction, and x-ray photoelectron diffraction. The band bending of these free surfaces was as low as ∼0.1 eV, indicating excellent passivation. It was found that Se undergoes an anion exchange reaction with As to depths of at least five atomic layers. This result suggests that the reduction of surface states is brought about by the formation of a GaAsxSe1−x/GaAs heterojunction interface of very high structural quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103887
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  • 7
    Electronic Resource
    Electronic Resource
    On depth profiling an InGaAsP-InP heterojunction (1983)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 5 (1983), S. 2-3 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: An In0.71Ga0.29As0.63P0.37/In0.97Ga 0.03 As0.10P0.90 liquid phase epitaxy (LPE) grown low lattice mismatch (δa/a ≤ 0.03%) interface has been profiled using 1 keV argon ions incident at 50° to sample surface normal in a commercial Varian Auger system. It was found that an interface width of 160 Å from P (120 eV) Auger peak intensities.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740050103
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