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GaSb booster cells for over 30% efficient solar-cell stacks (1989)

Fraas, L. M. ; Girard, G. R. ; Avery, J. E. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 66 (1989), S. 3866-3870

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The fabrication of GaSb infrared-sensitive photovoltaic cells designed to boost the energy-conversion efficiency in tandem solar cell stacks is reported. Located behind GaAs solar-cells in 50× concentrated light configurations, these GaSb cells will boost the stack efficiency by 6.5 percentage points for space (AM0) and 7.0 percentage points for terrestrial (AM1.5D) applications. Assuming a GaAs cell efficiency of 26.7% (AM1.5D, 50×) as recently reported, the GaAs on GaSb stack efficiency will be 33.7%. Reduced series resistance in future GaSb cells will allow tandem-stack energy-conversion efficiencies over 35%.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.344051

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