ZIB

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Interfacial work functions and extrinsic silicon infrared photocathodes (1989)

Coon, D. D. ; Devaty, R. P. ; Perera, A. G. U. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 55 (1989), S. 1738-1740

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: It is shown that n+ and/or p+ contacts on p-i-n diodes can function as solid-state photoemitters at temperatures (approximately-less-than)20 K. Infrared radiation can excite electrons or holes over small n-i or p-i interfacial barriers and into the intrinsic region when the diode is forward biased. Photoelectric thresholds in the far infrared corresponding to 37 and 61 μm cutoffs have been observed for silicon devices using a Fourier transform spectrometer. Suggestions are made to tailor the cutoff wavelengths using different concentrations of various impurities near the metal-insulator transition. Epitaxially grown multilayered (superlattice) detectors are proposed.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.102203

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit