Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 239-241
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High quality ZnTe-ZnSe strained-layer superlattices grown on GaAs (001) substrates have been obtained by the hot wall epitaxy technique through introducing ZnTe and ZnSe buffers. Raman scattering from folded longitudinal acoustic phonons was observed. High-angle satellite reflection peaks due to Cu Kα1 and Kα2 radiations were clearly resolved in the x-ray diffraction patterns, and these patterns can be almost interpreted by a simple step model. The effect of the buffer layer on the strain of the superlattice is evaluated from the results of Raman scattering and x-ray diffraction measurements.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101000
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