Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 1875-1877
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report, for the first time, the experimental observation of capacitive modulation of bipolar current in crystalline silicon devices consisting of a lateral p-i-n channel and an insulated polycrystalline silicon gate. Modulation characteristics of devices with different channel lengths are compared.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101265
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