Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 2179-2181
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A new approach of growing thick Ge layers on Si substrates by molecular beam epitaxy is presented. A 30–80 A(ring) thick Ge overlayer is first deposited on the Si(100) substrate at room temperature. By thermally annealing the sample to 300 or 500 °C for 10 min, the Ge atoms cluster into randomly distributed islands which would play a role in releasing the mismatch stress at the interface. The Ge film of 10 000 A(ring) thickness epitaxially grown on this surface at 550 °C shows a better crystalline quality than that grown by a conventional method. A full width at half maximum of 262 s for the Ge (400) x-ray diffraction peak has been achieved.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100275
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