Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 1317-1319
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The controlled incorporation of carbon has been demonstrated for the metalorganic vapor phase epitaxy of GaAs. Carbon levels between 1016 and 1019 cm−3 can be achieved under typical growth conditions by using Ga(CH3)3 and either As(CH3)3 or mixtures of As(CH3)3 and AsH3. The carbon incorporation into GaAs goes through a minimum with growth temperature at ∼650 °C when using Ga(CH3)3 and As(CH3)3. The controlled addition of AsH3 monotonically decreases the carbon incorporation. The high carbon levels ((approximately-greater-than)1–2×1019 cm−3), greater than the reported solid solubility, are thermally stable with a low diffusion coefficient. The GaAs:C layers exhibit a low deep level concentration, ∼1013 cm−3, with only a single midgap trap present.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100008
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