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  • 1
    Electronic Resource
    Electronic Resource
    Excitation and decay mechanisms of the intra-4f luminescence of Yb3+ in epitaxial InP:Yb layers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 114-116 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The decay and excitation processes of internal transitions of Yb3+(4f13) incorporated in InP were investigated by means of time-resolved photoluminescence and photoluminescence excitation spectroscopy. From the temperature dependence of the excited state lifetime we find several decay mechanisms, including a bound-exciton-like Auger process, energy transfer, and thermal depopulation. Excitation spectroscopy reveals that free carriers are needed during the excitation process of Yb centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99067
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