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Demonstration of an InAsSb strained-layer superlattice photodiode (1988)

Kurtz, S. R. ; Dawson, L. R. ; Zipperian, T. E. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 52 (1988), S. 1581-1583

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A photodiode consisting of a p-n junction embedded in an InAs0.09Sb0.91/InSb strained-layer superlattice with equal 130-A(ring)-thick layers was grown using molecular beam epitaxy. This nonoptimized device exhibited photoresponse out to a wavelength of 8.7 μm at 77 K. The resistance and the minority-carrier diffusion length of the photodiode result in a detectivity (3×109 cm Hz1/2/W) at 7 μm that is within one order of magnitude of the detectivity of the best HgCdTe detectors at that wavelength.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.99087

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