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Spatial localization of impurities in δ-doped GaAs (1988)

Schubert, E. F. ; Stark, J. B. ; Ullrich, B. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 52 (1988), S. 1508-1510

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Capacitance-voltage profiles on δ-doped GaAs grown by molecular beam epitaxy reveal extremely narrow widths of (approximately-less-than)40 A(ring) at room temperature. Subband structure and capacitance-voltage (C-V) profiles of δ-doped GaAs are calculated self-consistently. Experimental C-V profiles agree with self-consistent results, only if we assume that Si impurities are localized on the length scale of the lattice constant in the host GaAs zinc-blende lattice.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.99114

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